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FGA25S125P Datasheet, ON Semiconductor

FGA25S125P igbt equivalent, 25a shorted-anode igbt.

FGA25S125P Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 627.78KB)

FGA25S125P Datasheet
FGA25S125P
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 627.78KB)

FGA25S125P Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
* High Input Impedance
* RoHS Compliant Applications
* Induction Heating.

Application


* Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technolo.

Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with .

Image gallery

FGA25S125P Page 1 FGA25S125P Page 2 FGA25S125P Page 3

TAGS

FGA25S125P
25A
Shorted-anode
IGBT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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